Kioxia introduces high-iops SSDs and long-term flash strategies for emerging AI and Enterprise Storage requirements
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- Kioxia describes his plans for a new SSD for AI workloads that reach 10 million IOPs
- IOps measures how quickly a storage device can handle small, random requests
- New Drive uses XL-Flash, a kind of SLC Nand and a new internal controller
Kioxia has revealed plans for a new one SSD It says that an impressive 10 million IOPs could hit, a performance level that is a square focused on the requirements of AI-driven systems.
The SSD uses XL-Flash, a type of single-level cell (SLC) Nand, combined with a new internal controller.
A spokesperson for Kioxia told Techpower -Up“We take our Ultrasnelle XL-Flash memory chips, which use cells at one level and combine them with a completely new controller … We focus on more than 10 million IOPs, and we are planning to have samples ready against the second half of 2026.”
Difference between IOPs and GBPs
IOPs, or input/output edits per second, measures how quickly a storage device can be made small, random requests, in particular important in AI and serverts where rapid access to small files is crucial.
This differs from GBPs, which refers to the actual data transfer speed and is used to measure how quickly large files can be read or written.
A disk with high GBPs can excel in video editing or large file transfers, but for tasks of machine learning in which thousands of small data packages are constantly read or written, more of high IOPs is important.
Kioxia’s approach to the next generation of storage not only includes one -off projects, but a broader effort to reach various use cases. Its CM9 series, to stimulate those who now go to customersFocuses on speed and reliability to match high-quality GPUs used in AI, while the LC9 series delivers huge 122 TB capacities for large databases.
Behind these products is the 8th generation BICS flash, which introduces SKBA technology to stimulate performance and efficiency.
Kioxia also prepares future flash memory generations with the help of two methods. The first will add more layers for capacity, while the second new CMOS designs combines with older cell structures to keep the investment costs under control.
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