Samsung plans a record-breaking 400-layer NAND chip that could be key to breaking the 200TB barrier for ultra-high capacity AI hyperscaler SSDs
- Samsung to release 400-layer NAND chip for AI data centers
- New BV NAND technology increases density and minimizes heat build-up
- Plans for 1,000-layer NAND by 2030 to expand capacity
Samsung is working to launch a record-breaking 400-layer vertical NAND flash chip by 2026, reports claim.
A report from the Korea Economic Journal says Samsung’s Device Solutions (DS) division aims to advance the NAND flash market with its advanced V10 NAND, designed to meet rising demand in AI data centers.
The company’s memory roadmap, as outlined in the report, shows plans for an advanced 10th generation NAND that will use bonding technology to build memory cells and the peripheral circuitry separately on different wafers, later fusing them into a single chip. Known as bonding vertical NANDFlash (BV NAND), this new approach minimizes heat generation and maximizes both capacity and performance, creating what Samsung has described as a “dream NAND for AI.”
1,000 layers by 2030
The BV NAND design, with a 1.6x higher bit density per unit area, supports ultra-high capacity solid-state drives (SSDs), ideal for AI applications.
Samsung’s current 286-layer V9 NAND chips marked a major milestone, but the 400-layer V10 is expected to redefine capacity limits, potentially exceeding the 200TB storage threshold for ultra-large AI hyperscaler SSDs, while improving energy efficiency is being improved.
For future releases, the world’s largest memory chipmaker plans to introduce 11th generation V11 NAND in 2027 with 50% faster data transfer speed, further optimizing performance for demanding data storage needs.
Samsung’s ambitious NAND roadmap goes even further, with plans for chips that will contain more than 1,000 layers by 2030. KED reports. These advancements are intended to keep Samsung ahead in the high-capacity NAND market, where demand is being driven by AI applications that require extensive storage solutions to handle large amounts of data.
In the DRAM sector, Samsung aims to release sixth-generation 1c DRAM and seventh-generation 1d DRAM by the end of 2024, aimed at use in high-end AI chips. According to the Korea Economic Journal According to the report, the company also has plans for sub-10nm 0a DRAM by 2027, using a vertical channel transistor structure for greater stability and efficiency.
